參數(shù)資料
型號: ISL9N7030BLP3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
中文描述: 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 5/10頁
文件大?。?/td> 197K
代理商: ISL9N7030BLP3
2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
100
1000
0.1
1
10
30
4000
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
30
40
50
V
G
,
Q
g
, GATE CHARGE (nC)
I
D
= 14A
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 48A
V
DD
= 15V
0
50
100
150
200
250
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 15A
t
d(OFF)
t
r
t
d(ON)
t
f
0
50
100
150
200
250
300
350
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
d(OFF)
t
r
t
d(ON)
t
f
V
GS
= 10V, V
DD
= 15V, I
D
= 15A
Test Circuits and Waveforms
FIGURE 15. GATE CHARGE TEST CIRCUIT
FIGURE 16. GATE CHARGE WAVEFORMS
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
Q
gs
V
GS
= 1V
Q
g(5)
V
GS
= 5V
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
0
Q
gd
ISL9N7030BLP3, ISL9N7030BLS3ST
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ISL9N7030BLS3ST 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
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ISL9R1560P2 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9R1560P2_Q 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel