參數(shù)資料
型號： ISL9N7030BLP3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
中文描述： 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/10頁
文件大小： 197K
代理商： ISL9N7030BLP3
2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 9
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 75A, V
GS
= 10V (Figures 7, 8)
-
0.007
0.009
I
D
= 48A, V
GS
= 4.5V (Figure 7)
-
0.010
0.012
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
= 15A
V
GS
= 4.
5V, R
GS
= 6.2
(Figures 13, 17, 18)
-
-
122
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
67
-
ns
Turn-Off Delay Time
t
d(OFF)
-
35
-
ns
Fall Time
t
f
-
32
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
= 15A,
V
GS
=
10V, R
GS
= 6.2
,
(Figures 14, 17, 18)
-
-
71
ns
Turn-On Delay Time
t
d(ON)
-
8
-
ns
Rise Time
t
r
-
40
-
ns
Turn-Off Delay Time
t
d(OFF)
-
64
-
ns
Fall Time
t
f
-
31
-
ns
Turn-Off Time
t
OFF
-
-
142
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge at 10V
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V,
I
D
= 48A,
I
g(REF)
= 1.0mA
(Figures 12, 15, 16)
-
45
68
nC
Total Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
24
37
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
2.6
4.0
nC
Gate to Source Gate Charge
Q
gs
-
7
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
8
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
(Figure 11)
-
2600
-
pF
Output Capacitance
C
OSS
-
520
-
pF
Reverse Transfer Capacitance
C
RSS
-
225
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 48A
-
-
1.25
V
I
SD
= 20A
-
-
1.0
V
Reverse Recovery Time
t
rr
I
SD
= 48A, dI
SD
/dt = 100A/
μ
s
-
-
26
ns
Reverse Recovered Charge
Q
RR
I
SD
= 48A, dI
SD
/dt = 100A/
μ
s
-
-
14
nC
ISL9N7030BLP3, ISL9N7030BLS3ST
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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ISL9R1560G2 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9R1560G2_Q 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9R1560P2 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9R1560P2_Q 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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