參數(shù)資料
型號： ISL9N305ASK8T
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 18A I(D) | SO
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 18A條（?。﹟蘇
文件頁數(shù)： 2/11頁
文件大小： 305K
代理商： ISL9N305ASK8T
2002 Fairchild Semiconductor Corporation
ISL9N305ASK8T Rev A1
I
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Unclamped Inductive Switching
t
AV
Avalanche Time
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
A
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 18A, V
GS
= 10V
I
D
= 9A, V
GS
= 4.5V
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.004
0.0064
0.005
0.008
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
4260
750
340
72
38
4.1
10.4
11.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 9A
I
g
= 1.0mA
108
57
6.1
-
-
-
-
-
-
V
DD
= 15V, I
D
= 9A
V
GS
= 4.5V, R
GS
= 3.9
-
-
-
-
-
-
-
158
-
-
-
-
145
ns
ns
ns
ns
ns
ns
24
81
44
52
-
V
DD
= 15V, I
D
= 9A
V
GS
= 10V, R
GS
= 3.9
-
-
-
-
-
-
-
100
-
-
-
-
173
ns
ns
ns
ns
ns
ns
12
55
66
50
-
I
D
= 2.2A, L = 3mH
145
-
-
μ
s
V
SD
Source to Drain Diode Voltage
I
SD
= 9A
I
SD
= 4A
I
SD
= 9A, dI
SD
/dt = 100A/
μ
s
I
SD
= 9A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
40
38
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
相關(guān)PDF資料
PDF描述
ISL9N316AD3ST TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 48A I(D) | TO-252AA
ISL9N316AP3 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 48A I(D) | TO-220AB
ISL9N316AS3ST TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 48A I(D) | TO-263AB
ISL9V2040D3ST TRANSISTOR | IGBT | N-CHAN | 390V V(BR)CES | 10A I(C) | TO-252AA
ISL9V2040S3ST TRANSISTOR | IGBT | N-CHAN | 390V V(BR)CES | 10A I(C) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N306AD3 功能描述:MOSFET 30V N-Channel Logic Level PWM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AD3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AP3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AS3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AW1 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*