參數(shù)資料
型號: ISL9H1260ES3T
英文描述: TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB
中文描述: 晶體管| IGBT的|正陳| 600V的五(巴西)國際消費電子展|甲一(c)|至263AB
文件頁數(shù): 4/12頁
文件大小: 157K
代理商: ISL9H1260ES3T
2001 Fairchild Semiconductor Corporation
ISL9H1260EG3, ISL9H1260EP3, ISL9H1260ES3 Rev. A
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
100
30
5
10
1000
T
C
75
o
C
T
J
= 125
o
C, R
G
= 10
, L = 200
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.75
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
20
V
GE
= 12V
V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
15
4
20
80
100
140
24
13
14
8
12
16
40
60
120
t
SC
I
SC
V
CE
= 390V, R
G
= 10
, T
J
= 125
o
C
0
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
1.5
2.0
16
12
18
0.5
2.5
8
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 150
o
C
6
10
14
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
2
4
16
14
18
12
0
1.0
1.5
2.0
0.5
2.5
6
10
8
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
E
O
,
μ
J
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
350
0
4
2
6
8
10
12
14
50
0
400
300
200
250
R
G
= 10
, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
175
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
50
200
75
250
275
125
4
2
6
8
10
12
14
0
25
225
100
150
R
G
= 10
, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
ISL9H1260EG3, ISL9H1260EP3, ISL9H1260ES3
相關(guān)PDF資料
PDF描述
ISL9H2060EG3 TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-247
ISL9N305ASK8T TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 18A I(D) | SO
ISL9N316AD3ST TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 48A I(D) | TO-252AA
ISL9N316AP3 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 48A I(D) | TO-220AB
ISL9N316AS3ST TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 48A I(D) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9K1560G3 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9K1560G3 制造商:Fairchild Semiconductor Corporation 功能描述:Fast Recovery Power Rectifier
ISL9K1560G3_Q 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9K18120G3 功能描述:整流器 18A 1200V Stealth RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9K18120G3_Q 功能描述:整流器 18A 1200V Stealth RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel