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參數(shù)資料
| 型號： | IRHM2C50SE |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
| 中文描述： | 晶體管N溝道（BVdss \u003d 600V電壓的Rds（on）\u003d 0.60ohm，身份證\u003d 10.4A） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 134K |
| 代理商： | IRHM2C50SE |
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
0.21
0.83
48
—
K/W
Typical socket mount
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
600
—
Typ
—
0.45
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.5
3.0
—
—
—
—
—
—
—
—
0.60
0.65
4.5
—
50
250
VGS = 12V, ID =6.5A
VGS = 12V, ID = 10.4A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 6.5A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 10.4A
VDS = Max Rating x 0.5
VGS(th)
gfs
IDSS
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
150
30
75
55
190
210
130
—
nC
VDD = 300V, ID = 10.4A,
RG = 2.35
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2700
300
61
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
IRHM2C50SE, IRHM7C50SE Devices
Pre-Radiation
nH
ns
Measured fromdrain lead,
6mm(0.25 in) frompackage
to center of die.
Measured fromsource lead,
6mm(0.25 in) frompackage
to source bonding pad.
Modified MOSFET symbol show-
μ
A
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ Max Units
—
—
—
—
Test Conditions
10.4
41.6
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.62
1200
16
V
ns
μ
C
T
j
= 25°C, IS = 10.4A, VGS = 0V
Tj = 25°C, IF = 10.4A, di/dt
≤
100A/
μ
s
VDD
≤
30V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Next Data Sheet
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