參數(shù)資料
型號(hào)： IRHF9130
廠商： International Rectifier
英文描述： TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
中文描述： 晶體管P溝道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.30ohm，身份證\u003d- 6.5A）
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 128K
代理商： IRHF9130
www.irf.com
3
Radiation Characteristics
IRHF9130
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 — -100 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0 V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100
I
DSS
Zero Gate Voltage Drain Current
— -25 — -25 μA
R
DS(on)
Static Drain-to-Source
— 0.30 — 0.30
V
GS
= -12V, I
D
=-4.1A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.30 — 0.30
V
GS
= -12V, I
D
=-4.1A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— -3.0 — -3.0 V
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
V
GS
= -20V
V
GS
= 20 V
V
DS
=-80V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHF9130 (JANSR2N7389)
2. Part number IRHF93130 (JANSF2N7389)
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
V
GS
= 0V, IS = -6.5A
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS
V
Cu
Br
I
n
o
T
E
m
L
)
m
c
(
V
e
M
y
)
g
V
r
e
e
n
M
(
E
e
)
g
n
m
a
μ
(
R
)
V
(
S
D
V
V
0
=
S
G
V
@
V
5
=
S
G
V
@
V
0
1
=
S
G
V
@
V
5
1
=
S
G
V
@
V
0
2
=
S
G
V
@
u
C
8
2
5
8
2
3
4
0
0
1
-
0
0
1
-
0
0
1
-
0
7
-
0
6
-
r
B
8
3
5
0
3
9
3
0
0
1
-
0
0
1
-
0
7
-
0
5
-
0
4
-
I
9
5
5
4
3
8
3
0
6
-
—
—
—
—
相關(guān)PDF資料
PDF描述
IRHG3214 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHG4214 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHG7214 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHG8214 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHI7360SE TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRHF9230 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHF93130 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHF93230 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHG110 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 950MA I(D) | DIP
IRHG3110 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*