參數(shù)資料
型號: IRGP20B60PD
廠商: International Rectifier
英文描述: WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述: WARP2系列IGBT與超快軟恢復二極管
文件頁數(shù): 4/10頁
文件大?。?/td> 739K
代理商: IRGP20B60PD
IRGP20B60PD
4
www.irf.com
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 125°C
Fig. 12
- Typ. Switching Time vs. I
C
T
J
= 125°C; L = 200μH; V
CE
= 390V, R
G
= 10
; V
GE
= 15V.
Diode clamp used: 8ETH06 (See C.T.3)
Fig. 11
- Typ. Energy Loss vs. I
C
T
J
= 125°C; L = 200μH; V
CE
= 390V, R
G
= 10
; V
GE
= 15V.
Diode clamp used: 8ETH06 (See C.T.3)
Fig. 10
- Typ. Diode Forward Characteristics
tp = 80μs
0
5
10
15
20
VGE (V)
0
50
100
150
200
250
300
350
400
450
IC
TJ = 25°C
TJ = 125°C
Fig. 7
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
0
5
10
15
20
VGE (V)
0
1
2
3
4
5
6
7
8
9
10
VC
ICE = 20A
ICE = 13A
ICE = 8.0A
0
5
10
15
20
VGE (V)
0
1
2
3
4
5
6
7
8
9
10
VC
ICE = 20A
ICE = 13A
ICE = 8.0A
0
5
10
15
20
25
IC (A)
0
50
100
150
200
250
300
350
E
EOFF
EON
0
5
10
15
20
25
IC (A)
1
10
100
1000
S
tR
tdOFF
tF
tdON
1
10
100
0.4
0.8
1.2
1.6
2.0
2.4
F
I
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
相關PDF資料
PDF描述
IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP35B60PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP4050 PDP Switch
IRGP4055PBF PDP TRENCH IGBT
IRGP4065DPBF PDP TRENCH IGBT
相關代理商/技術參數(shù)
參數(shù)描述
IRGP20B60PD1 制造商:International Rectifier 功能描述:IINTERNATIONAL RECTIFIER PART
IRGP20B60PDHR 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 40A 3PIN TO-247AC - Bulk
IRGP20B60PDPBF 功能描述:IGBT 晶體管 600V Warp2 150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGP30B120KD 制造商:International Rectifier 功能描述:IGBT TRANSISTOR PACKAGE/CASE:TO-247AD
IRGP30B120KD-E 制造商:International Rectifier 功能描述: