參數(shù)資料
型號(hào)： IRGI4061DPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)DIODEINSULATED柵雙極晶體管與超快軟恢復(fù)二極管
文件頁數(shù)： 2/10頁
文件大小： 298K
代理商： IRGI4061DPBF
IRGI4061DPbF
2
www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28 μH, R
G
= 22
.
Pulse width limited by max. junction temperature.
θ
!
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
4.0
Typ.
—
0.75
1.35
1.53
1.58
Max.
—
—
1.59
—
—
6.5
Units Conditions
V
V
GE
= 0V,I
c
=100 μA
V/°C
V
GE
= 0V, I
c
= 250 μA ( -55 -150
o
C )
I
C
= 11A, V
GE
= 15V, T
J
= 25°C
I
C
= 11A, V
GE
= 15V, T
J
= 125°C
I
C
= 11A, V
GE
= 15V, T
J
= 150°C
V
V
CE
= V
GE
, I
C
= 500 μA
mV/°C V
CE
= V
GE
, I
C
= 1.0mA ( 25 -150
o
C )
S
V
CE
= 50V, I
C
= 11A, PW =80
μ
s
μA
V
GE
= 0V,V
CE
= 600V
μA
V
GE
= 0v, V
CE
= 600V, T
J
=150°C
V
I
F
= 11A
I
F
= 11A, T
J
= 150°C
nA
V
GE
= ± 20 V
V
CE(on)
Collector-to-Emitter Saturation Voltage
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
—
—
—
-15
11
2.0
550
1.84
1.33
—
—
—
25
—
—
—
—
—
2.05
—
±100
V
FM
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
35
8.0
13
52
231
283
37
18
111
30
Max.
53
12
23
95
340
435
46
26
129
41
Units
I
C
= 11A
V
CC
= 400V
V
GE
= 15V
I
C
= 11A, V
CC
= 400V, V
GE
= 15V
R
G
= 22
, L=1mH, L
S
= 150nH, T
J
= 25°C
nC
μJ
Energy losses include tail and diode reverse recovery
I
C
= 11A, V
CC
= 400V
ns
R
G
= 22
, L=1mH, L
S
= 150nH
T
J
= 25°C
143
316
459
35
19
134
45
—
—
—
—
—
—
—
—
—
—
I
C
= 11A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 22
, L=1mH, L
S
= 150nH, T
J
= 150°C
Energy losses include tail and diode reverse recovery
I
C
= 11A, V
CC
= 400V
ns
R
G
= 22
, L=1mH, L
S
= 150nH
T
J
= 150°C
1050
89
30
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
T
J
= 150°C, I
C
= 40A
V
CC
= 480V, Vp =600V
Rg = 22
, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
R
G
= 22
, V
GE
= +15V to 0V
T
J
= 150
o
C
V
CC
= 400V, I
F
= 11A
V
GE
= 15V, Rg = 22
, L=1mH, L
S
=150nH
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Erec
Reverse recovery energy of the diode
Diode Reverse recovery time
—
—
—
211
60
—
—
—
μJ
ns
trr
Irr
Peak Reverse Recovery Current
18
A
μs
pF
Conditions
V
—
Diode Forward Voltage Drop
Collector-to-Emitter Leakage Current
SCSOA
Short Circuit Safe Operating Area
5
—
相關(guān)PDF資料
PDF描述
IRGI4065PBF PDP TRENCH IGBT
IRGI4085PBF PDP TRENCH IGBT
IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGIB7B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGI4062DPBF 功能描述:IGBT ISOLATED TO-220AB RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRGI4064DPBF 功能描述:IGBT 600V 15A TO220 COPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRGI4065PBF 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 300V 28A 3PIN TO-220AB FULLPAK - Bulk 制造商:International Rectifier 功能描述:IGBT 300V FULLPAK-220
IRGI4085-111PBF 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGI4085PBF 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 330V 28A 3PIN TO-220 - Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*