- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄384501 > IRGB6B60K (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | IRGB6B60K |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁(yè)數(shù)： | 13/13頁(yè) |
| 文件大?。?/td> | 245K |
| 代理商： | IRGB6B60K |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)當(dāng)前第13頁(yè)
IRG/B/S/SL6B60K
www.irf.com
13
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
08/04
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial
market.
Qualification Standards can be found on IR’s Web site.
Notes:
V
CC
= 80% (V
CES
), V
GE
=20V, L = 100μH, R
G
= 100
This is only applied to TO-220AB package
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE.
TO-220 package is not recommended for Surface Mount Application
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
1.75 (.069)
1.25 (.049)
11.60 (.457)
15.42 (.609)
15.22 (.601)
4.72 (.136)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGS6B60K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGSL6B60K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC40S | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) |
| IRGBF20 | INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A) |
| IRGBF20F | Aluminum Polymer SMT Capacitor; Capacitance: 470uF; Voltage: 6.3V; Case Size: 10x10 mm; Packaging: Tape & Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGB6B60KD | 制造商:International Rectifier 功能描述:SINGLE IGBT, 600V, 13A, Transistor Type:IGBT, DC Collector Current:13A, Collecto |
| IRGB6B60KDPBF | 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB6B60KPBF | 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB8B60K | 制造商:International Rectifier 功能描述:IGBT TO-220AB |
| IRGB8B60KPBF | 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。