參數(shù)資料
型號(hào)： IRG4IBC30WPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 絕緣柵雙極晶體管
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 254K
代理商： IRG4IBC30WPBF
IRG4IBC30WPbF
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
51
—
7.6
—
18
—
25
—
16
—
99
—
67
—
0.13
—
0.13
—
0.26 0.35
—
24
—
17
—
150
—
150
—
0.55
—
7.5
—
980
—
71
—
18
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
76
11
27
—
—
150
100
—
—
I
C
= 12A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25°C
I
C
= 12A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
See Fig. 9, 10, 13, 14
mJ
—
—
—
—
—
—
—
—
—
T
J
= 150°C,
I
C
= 12A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
See Fig. 11,13, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
mJ
nH
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
—
18
—
—
0.34
—
2.1
—
2.45
—
1.95
3.0
—
—
-11
11
16
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
2.7
—
—
6.0
—
—
250
2.0
1000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 12A V
GE
= 15V
I
C
= 23A
I
C
= 12A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100 V, I
C
= 12A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
t = 60s, f = 60Hz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 23
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
相關(guān)PDF資料
PDF描述
IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC30KD GT 19C 19#16 SKT RECP
irg4ibc30w INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30FDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT
IRG4PC30WPBF INSULATED GATE BIPOLAR TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4MC30F 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 28A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 28A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:IGBT N-CH 600V 28AMPS 3 PIN
IRG4MC30FSCV 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 28A 3PIN TO-254AA - Bulk
IRG4MC30FSCX 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 28A 3PIN TO-254AA - Bulk
IRG4MC40U 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 35A 3PIN TO-254AA - Bulk
IRG4MC40USCV 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 35A 3PIN TO-254AA - Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*