參數(shù)資料
型號: IRFS340
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Power MOSFET(400V,0.55Ω,8A)(N溝道功率MOS場效應(yīng)管(漏源電壓400V,導(dǎo)通電阻0.55Ω,漏電流8A))
中文描述: 8 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3PF, 3 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 231K
代理商: IRFS340
IRFS340
400
--
2.0
--
--
--
--
--
0.50
--
--
--
--
--
175
80
18
21
78
28
58
8.1
31.3
--
--
4.0
100
-100
10
100
0.55
--
1530
205
95
50
55
170
65
75
--
--
7.05
1180
--
--
--
315
2.84
8
44
1.5
--
--
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=15mH, I
AS
=8A, V
DD
=50V, R
G
=27
, Starting T
J
=25
°
C
(3) I
SD
10A, di/dt
170A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
°
C
(4) Pulse Test: Pulse Width = 250
μ
s, Duty Cycle
2%
(5) Essentially Independent of Operating Temperature
1&+$11(/
32:(5 026)(7
Electrical Characteristics
(T
C
=25
°
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
°
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=30V
V
GS
=-30V
V
DS
=400V
V
DS
=320V,T
C
=125
°
C
V
GS
=10V,I
D
=4A
(4)
V
DS
=50V,I
D
=4A
(4)
V
DD
=200V,I
D
=10A,
R
G
=9.1
See Fig 13
(4) (5)
V
DS
=320V,V
GS
=10V,
I
D
=10A
See Fig 6 & Fig 12
(4) (5)
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
°
C,I
S
=8A,V
GS
=0V
T
J
=25
°
C,I
F
=10A
di
F
/dt=100A/
μ
s
(4)
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