參數(shù)資料
型號: IRFRU120A
廠商: Fairchild Semiconductor Corporation
英文描述: Advanced Power MOSFET
中文描述: 先進的功率MOSFET
文件頁數(shù): 2/7頁
文件大?。?/td> 256K
代理商: IRFRU120A
N-C HANNEL
POWER MOSFET
C
Electrical Characteristics
(T
C
=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/ T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250 A
I
D
=250 A
See Fig 7
V
DS
=5V,I
D
=250 A
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V,T
C
=125
V
GS
=10V,I
D
=4.2A
V
DS
=40V,I
D
=4.2A
V
DD
=50V,I
D
=9.2A,
R
G
=18
See Fig 13
V
DS
=80V,V
GS
=10V,
I
D
=9.2A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
μ
Integral reverse pn-diode
in the MOSFET
T
J
=25
,I
S
=8.4A,V
GS
=0V
T
J
=25
,I
F
=9.2A
di
F
/dt=100A/ s
Ο
C
O
4
O
5
Ο
C
Ο
C
O
4
O
4
O
4
O
4
O
1
Ο
C
Ο
C
μ
O
5
O
4
IRFR/U120A
100
--
2.0
--
--
--
--
--
0.12
--
--
--
--
--
95
38
14
14
36
28
16
2.7
7.8
--
--
4.0
100
-100
10
100
0.2
--
480
110
45
40
40
90
70
22
--
--
6.29
370
--
--
--
98
0.34
8.4
34
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=3mH, I
AS
=8.4A, V
DD
=25V, R
G
=27
I
SD
9.2
A, di/dt
3
00A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
, Starting T
J
=25
<
O
1
O
O
3
O
2
4
o
C
o
C
相關(guān)PDF資料
PDF描述
IRFR120A Advanced Power MOSFET
IRFU120A Advanced Power MOSFET
IRFRU220A Advanced Power MOSFET
IRFS140A N-Channel Power MOSFET(23A,60V,0.04Ω)(N溝道功率MOS場效應(yīng)管(漏電流23A, 漏源電壓60V,導通電阻0.04Ω))
IRFS150A N-Channel Power MOSFET(100V,0.04Ω,31A)(N溝道功率MOS場效應(yīng)管(漏源電壓100V,導通電阻0.04Ω,漏電流31A))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFRU130A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFRU220A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFRU3707PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET
IRFRU3910 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)
IRFRU4105 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A)