- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384497 > IRFR3707ZPBF (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRFR3707ZPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 261K |
| 代理商： | IRFR3707ZPBF |
www.irf.com
11
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
12/04
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.58mH, R
G
= 25
,
I
AS
= 12A.
Pulse width
≤
400μs; duty cycle
≤
2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
0-.
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFU3707ZPBF | HEXFET Power MOSFET |
| IRFU3707 | Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A) |
| IRFR3707 | Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A) |
| IRFR3709Z | HEXFET Power MOSFET |
| IRFU3709Z | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR3707ZTR | 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 30V, 56A, D-PAK, Transistor Polarity:N Channel, Continuous Dra |
| IRFR3707ZTRLPBF | 功能描述:MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3707ZTRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3707ZTRRPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3708 | 功能描述:MOSFET N-CH 30V 61A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。