參數(shù)資料
型號(hào)： IRFP27N60K
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 600V電壓的Rds（on）典型.\u003d 180mohm，身份證\u003d 27A條）
文件頁數(shù)： 2/8頁
文件大?。?/td> 91K
代理商： IRFP27N60K
IRFP27N60K
2
www.irf.com
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 27A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 27A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
I
RRM
t
on
–––
–––
–––
–––
–––
620
11
36
1.5
920
16
53
V
ns
μC
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Diode Characteristics
Parameter
Min. Typ. Max. Units
14
–––
–––
–––
–––
–––
–––
–––
–––
27
–––
110
–––
43
–––
38
–––
4660
–––
–––
460
–––
41
–––
5490
–––
–––
120
–––
250
Conditions
V
DS
= 50V, I
D
= 16A
I
D
= 27A
V
DS
= 480V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 300V
I
D
= 27A
R
G
= 4.3
V
GS
= 10V,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 480V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 480V
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
180
56
86
–––
–––
–––
–––
S
nC
–––
–––
pF
–––
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
S
D
G
27
110
A
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
600
–––
–––
0.64
–––
180
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 16A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
220
5.0
50
250
100
-100
V
V/
°
C
m
V
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Static @ T
J
= 25
°
C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting T
J
= 25
°
C, L = 1.4mH, R
G
= 25
,
I
AS
= 27A, dv/dt = 13V/ns. (See Figure 12a)
I
SD
≤
27A, di/dt
≤
390A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
相關(guān)PDF資料
PDF描述
IRFP32N50K Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)
IRFP32N50 Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A)
IRFP350LC Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)
IRFP350 N-CHANNEL POWER MOSFETS
IRFP350 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP27N60K-205 制造商:Vishay Angstrohm 功能描述:POWER MOSFET
IRFP27N60KPBF 功能描述:MOSFET N-Chan 600V 27 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP2907 制造商: 功能描述: 制造商:undefined 功能描述:
IRFP2907 制造商:International Rectifier 功能描述:MOSFET N TO-247
IRFP2907HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 80V 209A 3-Pin(3+Tab) TO-247AC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 209A 3PIN TO-247AC - Rail/Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*