參數(shù)資料
型號(hào)： IRFP260N
廠商： International Rectifier
英文描述： N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
中文描述： N溝道HEXFET功率MOSFET的（不適用溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 122K
代理商： IRFP260N
IRFP260N
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 28A, V
GS
= 0V
T
J
= 25°C, I
F
= 28A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
268
1.9
1.3
402
2.8
V
ns
μ
C
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
50
200
A
Starting T
J
= 25°C, L = 1.5mH
R
G
= 25
, I
AS
= 28A.
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
I
SD
≤
28A, di/dt
≤
486A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
200
–––
–––
0.26
–––
–––
2.0
–––
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
–––
60
–––
55
–––
48
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 28A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 28A
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 28A
V
DS
= 160V
V
GS
= 10V
V
DD
= 100V
I
D
= 28A
R
G
= 1.8
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.04
4.0
–––
25
250
100
-100
234
38
110
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4057
603
161
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
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參數(shù)描述
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