參數(shù)資料
型號： IRFP260
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.04ohm，身份證\u003d 50A條）
文件頁數(shù)： 2/8頁
文件大小： 122K
代理商： IRFP260
IRFP260N
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 28A, V
GS
= 0V
T
J
= 25°C, I
F
= 28A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
268
1.9
1.3
402
2.8
V
ns
μ
C
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
50
200
A
Starting T
J
= 25°C, L = 1.5mH
R
G
= 25
, I
AS
= 28A.
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
I
SD
≤
28A, di/dt
≤
486A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
200
–––
–––
0.26
–––
–––
2.0
–––
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
–––
60
–––
55
–––
48
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 28A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 28A
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 28A
V
DS
= 160V
V
GS
= 10V
V
DD
= 100V
I
D
= 28A
R
G
= 1.8
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.04
4.0
–––
25
250
100
-100
234
38
110
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4057
603
161
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
相關(guān)PDF資料
PDF描述
IRFP260 Standard Power MOSFET - N-Channel Enhancement Mode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP260MPBF 功能描述:MOSFET MOSFT 200V 49A 40mOhm 156nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP260N 制造商:International Rectifier 功能描述:MOSFET N TO-247
IRFP260NHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 50A 3-Pin(3+Tab) TO-247AC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 50A 3PIN TO-247AC - Rail/Tube
IRFP260NPBF 功能描述:MOSFET MOSFT 200V 49A 40mOhm 156nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP260PBF 功能描述:MOSFET N-Chan 200V 46 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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