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參數(shù)資料
| 型號： | IRFP2410 |
| 廠商： | International Rectifier |
| 英文描述： | 100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N溝道 HEXFET功率MOS場效應(yīng)管) |
| 中文描述： | 100V的，第61A，N溝道HEXFET功率MOSFET（100V的，61A條，?溝道的HEXFET功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 147K |
| 代理商： | IRFP2410 |
IRFP2410
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 37A, V
GS
= 0V
T
J
= 25°C, I
F
= 37A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
180
990
2.5
270
1500
V
ns
nC
V
DD
= 25V, starting T
J
= 25°C, L = 270μH
R
G
= 25
, I
AS
= 37A. (See Figure 12)
I
SD
≤
37A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100
–––
–––
0.11
–––
––– 0.025
2.0
–––
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
16
–––
100
–––
120
–––
97
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 37A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 37A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 37A
V
DS
= 80V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 37A
R
G
= 6.2
R
D
= 1.3
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
180
30
69
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4600
1100
200
–––
--––
–––
pF
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
–––
240
–––
–––
61
A
nH
L
D
Internal Drain Inductance
–––
5.0
–––
L
S
Internal Source Inductance
–––
13
–––
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
μA
nA
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