參數(shù)資料
型號(hào): IRFP044N
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=53A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 55V的,的Rds(on)\u003d 0.020ohm,身份證\u003d 53A條)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 105K
代理商: IRFP044N
IRFP044N
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
400
800
1200
1600
2000
2400
2800
1
10
100
C
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
10
20
30
40
50
60
Q , Total Gate Charge (nC)
V
G
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
I = 28A
1
10
100
1000
0.4
0.8
1.2
1.6
2.0
2.4
T = 25°C
V = 0V
V , Source-to-Drain Voltage (V)
I
S
A
T = 175°C
1
10
100
1000
1
10
100
V , Drain-to-Source Voltage (V)
I
D
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
100μs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP044N 制造商:International Rectifier 功能描述:Single N-Channel HEXFET Power MOSFET Dr
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IRFP044NPBF 功能描述:MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP044PBF 功能描述:MOSFET N-Chan 60V 57 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP045 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | TO-247AC