參數(shù)資料
型號(hào): IRFMA450
廠商: International Rectifier
英文描述: POWER MOSFET THRU-HOLE (Tabless TO-254AA)
中文描述: 功率MOSFET的通孔(Tabless到254AA)
文件頁(yè)數(shù): 7/7頁(yè)
文件大?。?/td> 163K
代理商: IRFMA450
www.irf.com
7
IRFMA450
ISD
12A, di/dt
130A/
μ
s,
VDD
500V, TJ
150
°
C
Pulse width
300
μ
s; Duty Cycle
2%
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25
°
C, L= 10.4mH
Peak IL =12A, VGS = 10V
Footnotes:
Case Outline and Dimensions —Tabless TO-254AA
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 02/02
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
4. CONFORMS TO J EDEC OUTLINE TO-254AA.
1 = DRAIN
2 = SOURCE
3 = GATE
PIN ASSIGNMENTS
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
6.60 [.260]
6.32 [.249]
0.13 [.005]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
3X
0.89 [.035]
0.36 [.014]
B A
B
1
2
3
17.40 [.685]
12.95 [.510]
3.81 [.150]
13.84 [.545]
13.59 [.535]
A
C
0.84 [.033]
MAX.
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