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參數(shù)資料
| 型號： | IRFMA450 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET THRU-HOLE (Tabless TO-254AA) |
| 中文描述： | 功率MOSFET的通孔（Tabless到254AA） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 163K |
| 代理商： | IRFMA450 |
IRFMA450
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
500
—
Typ
—
0.68
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
6.5
—
—
—
—
—
—
—
—
0.415
0.515
4.0
—
25
250
VGS = 10V, ID = 8.0A
VGS = 10V, ID = 12A
VDS = VGS, ID = 250μA
VDS > 15V, IDS = 8.0A
VDS= 400V ,VGS=0V
VDS = 400V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 12A
VDS = 250V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
120
19
70
35
190
170
130
—
nC
VDD = 250V, ID = 12A,
VGS =10V, RG = 2.35
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2700
600
240
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJCS
Case-to-Sink
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
0.21
—
—
Units
Test Conditions
0.83
—
48
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
12
48
1.7
1600
14
Test Conditions
—
—
—
—
—
V
nS
μC
T
j
= 25°C, IS = 12A, VGS = 0V
Tj = 25°C, IF = 12A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from package)
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| IRFMG40 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 1KV 3.9A 3PIN TO-254AA - Bulk |
| IRFMG40D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-254VAR |
| IRFMG40SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 1KV 3.9A 3PIN TO-254AA - Bulk |
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| IRFMG40U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-254VAR |
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