參數(shù)資料
型號: IRFF9130
廠商: International Rectifier
英文描述: POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
中文描述: 功率MOSFET P溝道(BVdss \u003d- 100V的,的Rds(on)\u003d 0.30ohm,身份證\u003d- 6.5A)
文件頁數(shù): 5/7頁
文件大?。?/td> 327K
代理商: IRFF9130
4-105
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.25
1.05
0.85
80
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
0
40
120
160
B
I
D
= 250
μ
A
0
-10
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-50
C
1000
800
600
400
200
0
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
I
D,
DRAIN CURRENT (A)
-4
-8
-12
-16
0
-20
5
4
3
0
2
g
f
,
PULSE DURATION = 80
μ
s
1
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 150
o
C
T
J
= 25
o
C
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-100
-10
-1
-0.1
-0.4
-0.6
-0.8
-1.0
-1.2
-1.8
-1.4
-1.6
Q
g(TOT),
TOTAL GATE CHARGE (nC)
8
16
24
32
0
40
-25
-20
-15
0
-10
V
G
-5
V
DS
= -20V
I
D
= -6.5A
V
DS
= -50V
V
DS
= -80V
IRFF9130
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