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參數(shù)資料
| 型號： | IRFF9120 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET |
| 中文描述： | 4 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 59K |
| 代理商： | IRFF9120 |
4-96
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source Current
I
SD
I
SM
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction
Rectifier
-
-
-4
A
Pulse Source Current (Note 3)
-
-
-16
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= -4A, V
GS
= 0V
T
J
= 150
o
C, I
SD
= 4A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= -4A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Diode Reverse Recovery Time
-
230
-
ns
Reverse Recovery Charge
-
1.3
-
μ
C
NOTES:
2. Pulse test: Pulse width
≤
300
μ
s, Duty Cycle 2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 250
o
C, L = 34.7mH, R
G
= 25
,
peak I
AS
= 4.0A. See Figures 15 and 16)
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
-3
0
25
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-5
150
-4
-2
-1
125
75
t
1
, RECTANGULAR PULSE DURATION (s)
10
Z
θ
J
,
T
10
-3
10
-2
10
-1
1
10
-5
10
-4
1.0
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
SINGLE PULSE
0.1
0.02
0.01
0.2
0.5
0.05
t
2
IRFF9120
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF9121 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-205AF |
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| IRFF9130 | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:Single P-Channel 100 V 25 W 34.8 Hexfet Transistor Through Hole - TO-39 制造商:International Rectifier 功能描述:P CH MOSFET, -100V, 6.5A, TO-205AF; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.5A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V ;RoHS Compliant: No 制造商:Int'L Rectifier 功能描述:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 制造商:IR 功能描述:Single P-Channel 100 V 25 W 34.8 Hexfet Transistor Through Hole - TO-39 |
| IRFF9130 | 制造商:International Rectifier 功能描述:MOSFET P CH 100V 6.5A TO-39 |
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