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參數(shù)資料
| 型號(hào)： | IRFF430 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
| 中文描述： | 2.75 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 325K |
| 代理商： | IRFF430 |
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE9. NORMALIZEDDRAINTOSOURCEON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
1
0.1
10
3
1
10
10
2
0.01
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
10ms
100ms
1ms
DC
100 s
10 s
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
200
0
300
6
4
3
0
2
I
D
,
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
80
μ
s PULSE TEST
1
V
GS
= 5.5V
5
V
GS
= 10V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
0
10
5
4
3
0
2
I
D
,
V
GS
= 10V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 5.5V
80
μ
s PULSE TEST
1
V
GS
= 4V
V
DS
> I
D(ON)
x r
DS(ON)MAX
80
μ
s PULSE TEST
T
J
= 125
o
C
T
J
= 25
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
3
1
0
0
1
2
3
4
7
2
4
T
J
= -55
o
C
5
6
I
D
, DRAIN CURRENT (A)
5
10
15
20
0
25
4
1
3
r
D
,
V
GS
= 20V
2
V
GS
= 10V
O
2.2
1.4
0.6
0
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.8
1.0
0.2
-40
40
80
120
I
D
= 1.5A
V
GS
= 10V
O
IRFF430
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF430R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF |
| IRFF431 | 制造商:International Rectifier 功能描述: |
| IRFF431R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.75A I(D) | TO-205AF |
| IRFF432 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.25A I(D) | TO-205AF |
| IRFF432R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.25A I(D) | TO-205AF |
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