參數(shù)資料
型號(hào): IRFF330
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
中文描述: 3.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 326K
代理商: IRFF330
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
3
1
10
10
2
0.1
I
D
,
1.0
10
0.01
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
DC
10
μ
s
100
μ
s
1ms
100ms
10ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
0
100
0
8
I
D
,
4
7
6
5
3
2
1
150
200
250
300
80
μ
s PULSE TEST
V
GS
= 5.5V
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
0
10
5
4
3
0
2
I
D
,
80
μ
s PULSE TEST
1
V
GS
= 4V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 10V
V
GS
= 6V
V
DS
> I
D(ON)
x r
DS(ON)MAX
80
μ
s PULSE TEST
T
J
= 125
o
C
T
J
= 25
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
3
1
0
0
2
4
6
1
5
2
4
T
J
= -55
o
C
5
3
7
I
D
, DRAIN CURRENT (A)
20
30
0
10
3
2
0
r
D
,
V
GS
= 10V
V
GS
= 20V
15
25
5
1
O
)
2
μ
s PULSE TEST
2.2
1.4
0.6
0
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.8
1.0
0.2
-40
40
80
120
V
GS
= 10V
I
D
= 2A
IRFF330
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