參數(shù)資料
型號: IRFF310
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET(1.35A, 400V, 3.600 Ω, N溝道功率MOS場效應(yīng)管)
中文描述: 1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 3/7頁
文件大?。?/td> 326K
代理商: IRFF310
3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
-
-
1.35
A
Pulse Source to Drain Current (Note 3)
-
-
5.5
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 1.35A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 1.35A, dI
SD
/d
t
= 100A/
μ
s
T
J
= 150
o
C, I
SD
= 1.35A, dI
SD
/d
t
= 100A/
μ
s
-
-
1.6
V
Reverse Recovery Time
-
380
-
ns
Reverse Recovered Charge
-
2.7
-
μ
C
NOTES:
2. Pulse test: pulse width
300
μ
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 40V, start T
J
= 25
o
C, L = 44.89
μ
H, R
G
= 50
, peak I
AS
= 1.35A (See Figures 15, 16).
Typical Performance Curves
T
C
= 25
o
C, Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
D
S
G
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50
75
100
25
150
1.0
0.8
0.6
0
0.4
I
D
,
0.2
125
1.6
1.4
1.2
Z
θ
J
,
1.0
0.1
0.01
10
-2
10
-5
10
-4
10
-3
0.1
1
10
SINGLE PULSE
t
1
, RECTANGULAR PULSE DURATION (LC)
0.01
0.5
0.2
0.1
0.05
0.02
T
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
IRFF310
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