參數(shù)資料
型號： IRFF210
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
中文描述： 2.2 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù)： 2/7頁
文件大?。?/td> 325K
代理商： IRFF210
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFF210
200
200
2.2
9.0
±
20
15
0.12
30
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
V
GS
= 0V, I
D
= 250
μ
A (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
V
GS
=
±
20V
V
GS
= 10V, I
D
= 1.25A (Figures 8, 9)
V
GS
> I
D(ON)
r
DS(ON)MAX
, I
D
= 1.25A (Figure 12)
I
D
≈
2.2A, R
G
= 9.1
, V
GS
= 10V,
R
L
= 33
for V
DS
= 75V,
R
L
= 44
for V
DS
= 100V,
V
DD
≈
0.5BV
DSS
(Figures 15, 16) MOSFET
Switching Times are Essentially Independent of
Operating Temperature
200
-
-
V
Gate to Threshold Voltage
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
2.2
-
-
A
Gate to Source Leakage Forward
-
-
±
100
nA
DraintoSourceOnResistance(Note2)
-
1.0
1.500
Forward Transconductance (Note 2)
0.8
1.3
-
S
Turn-On Delay Time
-
8
15
ns
Rise Time
-
15
25
ns
Turn-Off Delay Time
-
10
15
ns
Fall Time
-
8
15
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 2.2A, V
DS
= 0.8 x Rated BV
DSS
,
I
G(REF)
= 1.5mA (Figures 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature
-
5.0
7.5
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
2.0
-
nC
Gate to Drain “Miller” Charge
-
3.0
-
nC
Input Capacitance
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
135
-
pF
Output Capacitance
-
60
-
pF
Reverse to Transfer Capacitance
-
16
-
pF
Internal Drain Inductance
Measured from the Drain
Lead, 5mm (0.2in) from
Header to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the
Source Lead, 5mm
(0.2in) from Header to
Source Bonding Pad
-
15
-
nH
Junction to Case
R
θ
JC
R
θ
JA
-
-
8.33
o
C/W
o
C/W
Junction to Ambient
Free Air Operation
-
-
175
L
S
L
D
G
D
S
IRFF210
相關(guān)PDF資料
PDF描述
IRFF210 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
IRFF230 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
IRFF310 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET(1.35A, 400V, 3.600 Ω, N溝道功率MOS場效應(yīng)管)
IRFF310 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFF210R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.2A I(D) | TO-205AF
IRFF211 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFF211R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-205AF
IRFF212 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1.8A I(D) | TO-205AF
IRFF212R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1.8A I(D) | TO-205AF
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