參數(shù)資料
型號: irfe430
廠商: International Rectifier
英文描述: HEXFET TRANSISTOR
中文描述: 的HEXFET晶體管
文件頁數(shù): 6/8頁
文件大小: 129K
代理商: IRFE430
6
www.irf.com
IRFE430, JANTX-, JANTXV-, 2N6802U Device
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
10V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
D D
DRIVER
A
15V
20V
25
50
75
100
125
150
0.00
0.20
0.40
0.60
0.80
Starting T , Junction Temperature ( C)
E
A
ID
1.1A
1.6A
2.5A
TOP
BOTTOM
相關(guān)PDF資料
PDF描述
IRFE430 HEXFET Transistor(HEXFET 晶體管)
IRFF110 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET(3.5A, 100V, 0.600 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管)
IRFF120 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET(6.0A, 100V , 0.300 Ohm, N溝道增強(qiáng)型功率MOS場效應(yīng)管)
IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
IRFF130 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET(8.0A, 100V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFE9024 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 5.4A 18PIN LCC - Bulk
IRFE9024SCV 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 5.4A 18PIN LCC - Bulk
IRFE9024SCX 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 5.4A 18PIN LCC - Bulk
IRFE9110 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 2.5A 18PIN LCC - Bulk
IRFE9110SCV 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 2.5A 18PIN LCC - Bulk