參數(shù)資料
型號： IRFD9120
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET(1.0A, 100V, 0.6 Ω, P溝道功率MOS場效應管)
中文描述： Si, SMALL SIGNAL, FET
封裝： HEXDIP-4
文件頁數(shù)： 2/6頁
文件大?。?/td> 52K
代理商： IRFD9120
4-46
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFD9120
-100
-100
-1.0
-8.0
±
20
1.0
0.008
370
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= -250
μ
A, V
GS
= 0V, (Figure 9)
V
GS
= V
DS
, I
D
= -250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= -10V
V
GS
=
±
20V
I
D
= -0.8A, V
GS
= -10V, (Figures 7, 8)
V
DS
< 50V, I
D
= -0.8A (Figure 11)
V
DD
= 0.5 x Rated BV
DSS
, I
D
= -1.0A,
R
G
= 9.1
, V
GS
= -10V, (Figures 16, 17)
R
L
= 50
for V
DD
= -50V
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature
-100
-
-
V
Gate to Threshold Voltage
-2
-
-4
V
Zero Gate Voltage Drain Current
-
-
-25
μ
A
μ
A
-
-
-250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
-1.0
-
-
A
Gate to Source Leakage Current
-
-
±
500
nA
Drain to Source On Resistance (Note 2)
-
0.5
0.6
Forward Transconductance (Note 2)
0.8
1.2
-
S
Turn-On Delay Time
-
25
50
ns
Rise Time
-
50
100
ns
Turn-Off Delay Time
-
50
100
ns
Fall Time
-
50
100
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= -10V, I
D
= -1.0A, V
DS
= 0.8 x Rated BV
DSS
(Figures 13, 18, 19)
Gate Charge is Essentially Independent of Operating
Temperature
-
16
20
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
9
-
nC
Gate to Drain “Miller” Charge
-
7
-
nC
Input Capacitance
V
DS
= -25V, V
GS
= 0V, f = 1MHz, (Figure 10)
-
300
-
pF
Output Capacitance
-
200
-
pF
Reverse Transfer Capacitance
-
50
-
pF
Internal Drain Inductance
Measured From the Drain
Lead, 2.0mm (0.08in) From
Header to Center of Die
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
-
4.0
-
nH
Internal Source Inductance
L
S
MeasuredFromtheSource
Lead, 2.0mm (0.08in) From
Header to Source Bonding
Pad
-
6.0
-
nH
Thermal Resistance Junction to Ambient
R
θ
JA
Typical Socket Mount
-
-
120
o
C/W
L
S
L
D
G
D
S
IRFD9120
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