參數資料
型號： IRFD420
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=0.37A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）\u003d 3.0ohm，身份證\u003d 0.37A）
文件頁數： 2/8頁
文件大?。?/td> 468K
代理商： IRFD420
Parameter
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min. Typ. Max. Units Conditions
500
—
—
—
0.59
—
—
—
3.0
2.0
—
4.0
1.5
—
—
—
—
25
—
—
250
—
—
100
—
—
-100
—
—
24
—
—
3.3
—
—
13
—
8.0
—
—
8.6
—
—
33
—
—
16
—
—
4.0
—
V
(BR)DSS
V
V
GS
= 0V, ID = 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10.0V, I
D
= 0.22A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 1.3A
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 2.1A
V
DS
= 400V
V
GS
= 10V
V
DD
= 250V
I
D
= 2.1A
R
G
= 18
R
D
= 120
Between lead,
6mm (0.25in.)
from package
and center of
die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V/°C
V
S
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
L
S
Internal Source Inductance
—
6.0
—
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
360
92
37
—
—
—
pF
IRFD420
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units Conditions
I
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 0.37A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.1A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
—
—
—
—
260
0.70
1.6
520
1.4
V
ns
μC
V
DD
= 50V, starting T
J
= 25°C, L = 40mH
R
G
= 25
, I
AS
= 1.5A.
I
SD
≤
4.4A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
—
—
5.0
—
—
0.37
A
μA
nA
ns
nH
Next Data Sheet
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IRFD420PBF 功能描述:MOSFET N-Chan 400V 0.37 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFD9010 功能描述:MOSFET P-Chan 50V 1.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFD9010PBF 功能描述:MOSFET P-Chan 50V 1.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFD9012 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 910MA I(D) | DIP
IRFD9014 功能描述:MOSFET P-Chan 60V 1.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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