參數(shù)資料
型號(hào): IRFD310
廠商: HARRIS SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET
中文描述: 400 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 50K
代理商: IRFD310
4-296
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
,
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
6
8
0.44
0.88
1.32
1.76
2.20
10
0
V
GS
= 6V
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2.20
1.76
1.32
0.88
0.44
00
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
3
6
1
2
3
4
r
D
,
I
D
, DRAIN CURRENT (A)
5
7
0
4
5
8
2
μ
s PULSE TEST
V
GS
= 20V
V
GS
= 10V
6
7
9
10
O
)
N
2.21
1.52
1.17
0.82
0.47
-55
-14
T
J
, JUNCTION TEMPERATURE (
o
C)
27
109
1.86
68
150
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 0.2A
N
1.10
1.03
0.99
0.95
0.92
-55
-14
27
T
J
, JUNCTION TEMPERATURE (
o
C)
109
1.07
68
150
I
D
= 250
μ
A
250
50
00
20
50
C
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
100
C
ISS
C
OSS
C
RSS
10
30
40
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
IRFD310
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