參數(shù)資料
型號: IRFD110
廠商: INTERSIL CORP
元件分類: 小信號晶體管
英文描述: 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET
中文描述: 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: HEXDIP-4
文件頁數(shù): 5/6頁
文件大?。?/td> 52K
代理商: IRFD110
4-273
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
D
, DRAIN CURRENT (A)
g
f
,
0
1
2
3
4
0.8
1.5
2.4
3.2
4.0
5
0
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.6
1.0
1.4
1.6
0.2
0.1
1.0
2
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
0.4
1.2
T
J
= 25
o
C
T
J
= 150
o
C
5
5
2
1.8
2.0
0.8
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Q
G
, GATE CHARGE (nC)
V
G
,
0
4
6
10
5
15
20
I
D
= 1A
10
0
2
8
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
IRFD110
相關PDF資料
PDF描述
IRFD110 Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A)
IRFD1Z0 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
IRFD1Z1 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
IRFD1Z2 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
相關代理商/技術參數(shù)
參數(shù)描述
IRFD110PBF 功能描述:MOSFET 100V Single N-Channel HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFD110PBF 制造商:International Rectifier 功能描述:MOSFET
IRFD110R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR
IRFD110U 制造商:n/a 功能描述:IRFD110U LOC: N9B9B
IRFD111 制造商:Rochester Electronics LLC 功能描述:- Bulk