參數(shù)資料
型號(hào): IRF7319
廠商: International Rectifier
英文描述: HEXFET?? Power MOSFET
中文描述: 的HEXFET??功率MOSFET
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 137K
代理商: IRF7319
IRF7319
Fig 14.
Typical Transfer Characteristics
Fig 13.
Typical Output Characteristics
Fig 12.
Typical Output Characteristics
Fig 15.
Typical Source-Drain Diode
Forward Voltage
P-Channel
1
10
100
0.1
1
10
D
20μs PULSE WIDTH
T = 25°C
J
A
-
-V DS
-3.0V
VGS
1
10
100
0.1
1
10
D
A
-
-VDS
-3.0V
VGS
20μs PULSE WIDTH
T = 150°C
J
1
10
100
3.0
3.5
-V , Gate-to-Source Voltage (V)
4.0
4.5
5.0
5.5
6.0
T = 25°C
T = 150°C
D
A
-
V = -10V
20μs PULSE WIDTH
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
T = 25°C
T = 150°C
V = 0V
GS
S
A
-
-V , Source-to-Drain Voltage (V)
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IRF7319TRPBF 功能描述:MOSFET MOSFT DUAL N/PCh 30V 6.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube