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參數(shù)資料
| 型號： | IRF6668 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 256K |
| 代理商： | IRF6668 |
www.irf.com
5
Fig 11.
Typical Threshold Voltage vs.
Junction Temperature
Fig 10.
Typical Source-Drain Diode Forward Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
Fig12.
Maximum Safe Operating Area
Fig 8.
Typical On-Resistance vs. Gate Voltage
Fig 9.
Typical On-Resistance vs. Drain Current
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
0
10
20
30
40
50
60
RD
)
ID = 12A
TJ = 25°C
TJ = 125°C
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
EA
ID
TOP
4.3A
7.6A
BOTTOM 23A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0
1
10
100
1000
IS
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
0
20
40
60
80
100
ID, Drain Current (A)
0
10
20
30
40
50
60
TD
)
TJ = 25°C
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
-75 -50 -25
0
25
50
75
100 125 150
TJ , Temperature ( °C )
2.0
3.0
4.0
5.0
6.0
TG
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
0
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100μsec
1msec
10msec
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6668PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6668TR1 | 功能描述:MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6668TR1PBF | 功能描述:MOSFET MOSFT 80V 55A 15mOhm 22nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6668TRBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6668TRPBF | 功能描述:MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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