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參數(shù)資料
| 型號： | IRF6668 |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 256K |
| 代理商： | IRF6668 |
2
www.irf.com
Pulse width
≤
400μs; duty cycle
≤
2%.
Electrical Characteristic @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
V
GS(th)
/
T
J
Gate Threshold Voltage Coefficient
I
DSS
Drain-to-Source Leakage Current
Min.
80
–––
–––
3.0
–––
–––
–––
–––
–––
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.097
12
4.0
-11
–––
–––
–––
–––
–––
22
4.8
1.6
7.8
7.8
9.4
12
1.0
19
13
7.1
23
1320
310
76
1400
200
Max. Units
–––
–––
15
4.9
–––
20
250
100
-100
–––
31
–––
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V/°C
m
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G (Internal)
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
nC
See Fig. 14
nC
ns
pF
Min.
–––
Typ.
–––
Max. Units
24
mJ
Diode Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
Typ.
–––
34
40
Max. Units
1.3
51
60
V
SD
t
rr
Q
rr
V
ns
nC
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 12A
V
GS
= 10V
I
D
= 12A
V
DS
= 40V
T
J
= 25°C, I
F
= 12A, V
DD
= 40V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DD
= 40V, V
GS
= 10V
I
D
= 12A
R
G
= 6.2
See Fig. 16
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 80V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
Conditions
V
GS
= 0V, V
DS
= 64V, f=1.0MHz
Conditions
L = 0.088mH. See Fig. 13
T
J
= 25°C, I
S
= 23A, R
G
= 25
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| IRF6668PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6668TR1 | 功能描述:MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6668TR1PBF | 功能描述:MOSFET MOSFT 80V 55A 15mOhm 22nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6668TRBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6668TRPBF | 功能描述:MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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