參數(shù)資料
型號： IRF6637
廠商： International Rectifier
英文描述： DirectFETPower MOSFET
中文描述： DirectFETPower MOSFET的
文件頁數(shù)： 3/9頁
文件大?。?/td> 265K
代理商： IRF6637
www.irf.com
3
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
Surface mounted on 1 in. square Cu
board (still air).
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
0.20
0.10
0.05
D = 0.50
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τ
i (sec)
0.6676 0.000066
1.0462 0.000896
1.5611 0.004386
29.282 0.68618
25.455 32
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
τ
5
τ
5
R
5
R
5
Absolute Maximum Ratings
Parameter
Units
W
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Thermal Resistance
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
55
–––
–––
3.0
–––
Units
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JC
R
θ
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
°C/W
W/°C
0.018
270
-40 to + 150
Max.
2.3
1.5
89
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
相關(guān)PDF資料
PDF描述
IRF6637TR1 DirectFETPower MOSFET
IRF6665 DIGITAL AUDIO MOSFET
IRF6668 DirectFET Power MOSFET
IRF6678 DirectFET Power MOSFET
IRF7103PBF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6637TR1 功能描述:MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6637TR1PBF 功能描述:MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6637TR1PBF 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N CH MOSFET, 30V, 11A, DIRECTFET MP
IRF6637TRPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6638PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:DirectFET Power MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*