參數(shù)資料
型號： IRF540N
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/10頁
文件大?。?/td> 126K
代理商： IRF540N
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
DS
= 95V, V
GS
= 0V
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
20V
100
-
-
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
I
D
= 33A, V
GS
= 10V (Figure 9)
2
-
4
V
Drain to Source On Resistance
-
0.033
0.040
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
TO-220
-
-
1.25
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
-
-
62
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 50V, I
D
= 33A
V
GS
=
10V,
R
GS
= 9.1
(Figures 18, 19)
-
-
100
ns
Turn-On Delay Time
-
9.5
-
ns
Rise Time
-
57
-
ns
Turn-Off Delay Time
-
40
-
ns
Fall Time
-
55
-
ns
Turn-Off Time
-
-
145
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 33A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
66
79
nC
Gate Charge at 10V
-
35
42
nC
Threshold Gate Charge
-
2.4
2.9
nC
Gate to Source Gate Charge
-
5.4
-
nC
Gate to Drain "Miller" Charge
-
13
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
1220
-
pF
Output Capacitance
-
295
-
pF
Reverse Transfer Capacitance
-
100
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 33A
I
SD
= 17A
I
SD
= 33A, dI
SD
/dt = 100A/
μ
s
I
SD
= 33A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.00
V
Reverse Recovery Time
t
rr
-
-
112
ns
Reverse Recovered Charge
Q
RR
-
-
400
nC
IRF540N
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF540N_R4942 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF540N-010HR 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube
IRF540NHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 33A 3PIN TO-220AB - Rail/Tube
IRF540NL 功能描述:MOSFET N-CH 100V 33A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF540NLHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 33A 3PIN TO-262 - Bulk
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