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參數(shù)資料
| 型號(hào)： | IR5001S |
| 廠商： | International Rectifier |
| 英文描述： | UNIVERSAL ACTIVE ORING CONTROLLER |
| 中文描述： | 通用有源ORing控制器 |
| 文件頁(yè)數(shù)： | 11/13頁(yè) |
| 文件大?。?/td> | 226K |
| 代理商： | IR5001S |
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IR5001
11
www.irf.com
In a well - designed Active ORing circuit, the
Rds(on) of the Active ORing FET should generate
between 50mV to 100mV of (INP – INN) voltage
during normal, steady state operation. (The normal
operation refers to current flowing from the source to
drain of the Active ORing FET, half of the full-load
system current flowing through each OR-ed source,
at nominal input voltage). Maximum power
dissipation under worst-case conditions for the FET
should be calculated and verified against the data
sheet limits of the selected device.
IR5001 Thermal considerations
Maximum junction temperature of the IR5001 in an
application should not exceed the maximum
operating junction temperature, specified at 125°C:
Tj = Pdiss * Rtheta j-a + Tamb <= Tj (max),
where Rtheta j-a is the thermal resistance from
junction to ambient thermal resistance (specified at
128 °C/W), Pdiss is IC power dissipation, and Tamb
is operating ambient temperature.
The maximum power dissipation can be estimated
as follows:
Pdiss < (Tj max – Tamb max) / Rtheta j-a
Since Tj max= 125
°
C, Tamb = 85
°
C, and Rtheta j-a
= 128
°
C/W, the maximum power dissipation allowed
is:
Pdiss max = (125 – 85) / 128 = 0.3W
With proper selection of Icc (as discussed in the
Detailed Pin Description), the maximum power
dissipation will never be exceeded (Max Icc * Max
Vcc = 10mA * 13.9V = 0.14W).
Layout Considerations
INN and INP should be connected very close to
the drain and source terminal of the Active ORing
FET. PCB trace between the Vout pin and the gate
of the N-FET should also be minimized. A minimum
of 0.1uF decoupling capacitor must be connected
from Vcc to Gnd of the IR5001and should be placed
as close to the IR5001 as possible. Ground should
be connected to the source of N-FET separately
from the INP pin.
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| IR5001SHR | 制造商:International Rectifier 功能描述:OR Controller N-Channel Single-OUT 8-Pin SOIC Tube |
| IR5001SPBF | 功能描述:IC CTRLR/MOSFET UNIV N-CH 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車(chē)，大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
| IR5001STR | 功能描述:IC CTRLR/MOSFET UNIV N-CH 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份，工業(yè)/汽車(chē)，大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR) |
| IR5001STRHR | 制造商:International Rectifier 功能描述:OR Controller N-Channel Single-OUT 8-Pin SOIC T/R |
| IR5001STRPBF | 功能描述:功率驅(qū)動(dòng)器IC Universal Active ORing Controller RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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