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參數(shù)資料
| 型號： | IPS031 |
| 廠商： | International Rectifier |
| 英文描述： | FULLY PROTECTED POWER MOSFET SWITCH |
| 中文描述： | 充分保護(hù)功率MOSFET開關(guān) |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 135K |
| 代理商： | IPS031 |
IPS031(S)
2
www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Vds (max)Continuous drain to source voltage
VIH
High level input voltage
VIL
Low level input voltage
Ids
Continuous drain current
Tamb=85
o
C
(TAmbient = 85
o
C, IN = 5V, rth = 60
o
C/W, Tj = 125
o
C) IPS031
(TAmbient = 85
o
C, IN = 5V, rth = 80
o
C/W, Tj = 125
o
C) IPS031S
Rin
Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
Min.
—
4
0
Max. Units
35
6
0.5
—
—
0.2
—
0
3.1
2.8
5
1
1
A
k
μ
S
kHz
V
Symbol Parameter
Rth 1
Thermal resistance free air
Rth 2
Thermal resistance junction to case
Rth 1
Thermal resistance with standard footprint
Rth 2
Thermal resistance with 1" square footprint
Rth 3
Thermal resistance junction to case
Min.
—
—
—
—
—
Typ.
60
3
80
60
3
Max. Units Test Conditions
—
—
—
—
—
Thermal Characteristics
TO-220
D
2
PAK (SMD220)
o
C/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70
μ
m copper thickness.
Symbol Parameter
Vds
Maximum drain to source voltage
Vin
Maximum input voltage
Iin, max
Maximum IN current
Isd
cont.
Min.
—
Max.
47
Units
Test Conditions
-0.3
7
-10
+10
mA
Diode max. continuous current
(1)
rth=62
o
C/W IPS031
—
2.8
TO220 free air
rth=5
o
C/W IPS031
rth=80
o
C/W IPS031S
—
18
2.2
TO220 with Rth=5
o
C/W
SMD220 Std. footprint
—
Isd
pulsed
Diode max. pulsed current
(1)
Pd
—
18
Maximum power dissipation
(1)
(rth=62
o
C/W) IPS031
(rth=80
o
C/W) IPS031S
—
2
—
1.56
ESD1
Electrostatic discharge voltage
(Human Body)
—
4
C=100pF, R=1500
,
C=200pF, R=0
,
L=10
μ
H
ESD2
Electrostatic discharge voltage
(Machine Model)
—
0.5
T stor.
Tj max.
Tlead
Max. storage temperature
-55
150
Max. junction temperature
-40
+150
Lead temperature (soldering, 10 seconds)
—
300
V
W
A
o
C
kV
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