參數(shù)資料
型號(hào): IP1R19A-12
廠商: TT electronics Semelab Limited
英文描述: ULTRA 2 LVD SE SCSI INTERTERM
中文描述: 5安培固定負(fù)電壓調(diào)節(jié)器
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 31K
代理商: IP1R19A-12
LAB
SEME
IP1R19A
IP3R19A
IP1R19
A
IP3R19
A
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/96
IP1R19A–12
IP3R19A–12
Min.
Typ.
-12.12
IP1R19–12
IP3R19–12
Min.
Typ.
-12.36
Parameter
Test Conditions
2
Max.
-11.88
Max.
-11.64
Units
V
V
O
V
O
V
I
V
O
I
O
I
Q
I
Q
V
D
I
PEAK
I
SC
e
n
R
θ
JC
Output Voltage
Line Regulation
Load Regulation
Quiescent Current
Quiescent Current
Change
Dropout Voltage
Ripple Rejection
Thermal Regulation
Peak Output Current
Short Circuit Current
Output Noise Voltage
Thermal Resistance
Junction to Case
I
O
= -5mA to -5A
P
50W
T
J
= Over Temp. Range
1
V
IN
= -14.5V to -35V
I
O
= -5mA
3
I
O
= -5mA to -5A
3
V
IN
= -15V to -27V
T
J
= Over Temp. Range
1
T
J
= Over Temp. Range
1
T
J
= Over Temp. Range
1
I
O
= -5mA
I
O
= -5mA to -5A
T
J
= Over Temp. Range
1
I
O
= -5mA
T
J
= Over Temp. Range
1
I
O
= -5A
T
J
= Over Temp. Range
1
I
O
= -1A
T
J
= Over Temp. Range
1
t
p
= 20ms
V
IN
= -17V
V
IN
= -17V
V
IN
= -35V
f = 10Hz to 100kHz
V
IN
= -14.5V to -35V
V
OUT
= 250mV
f = 120Hz
P = 50W
T
J
= Over Temp. Range
1
K Package
V Package
-12
-12.60
-11.40
10
60
20
120
20
120
40
240
5
10
5
2.2
3
52
72
0.002
0.02
-12
-8
-4
-2
75
1.0
1.5
1.0
1.5
-12
-12.36
-11.64
5
30
10
60
10
60
20
120
5
10
5
2.2
3
52
72
0.002
0.01
-12
-8
-4
-2
75
1.0
1.5
1.0
1.5
V
mV
mV
mA
mA
V
dB
%/W
A
A
μ
V
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Notes
1) Applies over full temperature range:–
T
J
= –55 to +150°C for IP1R19A–12 / IP1R19–12
T
J
=
0 to +125°C for IP3R19A–12 / IP3R19–12
All other specifications apply at T
C
= 25°C unless otherwise stated.
2) Test conditions unless otherwise stated:–
V
IN
= -17V , I
OUT
= -2.5A .
Although Power Dissipation is internally limited, these specifications apply for Power Dissipation up to 50W.
3) Load and Line regulation are electrically independent and are measured using pulse techniques at low duty cycle in order to
maintain constant junction temperature. To determine the effects on the output voltage due to device heating, refer to thermal
regulation specification.
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