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參數(shù)資料
| 型號(hào)： | IDT7MB4045S20Z |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | 256K x 32 CMOS STATIC RAM MODULE |
| 中文描述： | 256K × 32的CMOS靜態(tài)RAM模塊 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | IDT7MB4045S20Z |
15.2
3
IDT7MP4045/7MP4145
256K x 32 CMOS STATIC RAM MODULE
COMMERCIAL TEMPERATURE RANGE
Figure 1. Output Load
*Includes scope and jig.
Figure 2. Output Load
(for t
OLZ
,t
OHZ
, t
CHZ
, t
CLZ
, t
WHZ
, t
OW
)
+5 V
480
30 pF*
DATA
OUT
255
2703 drw 03
+5 V
480
5 pF*
DATA
OUT
255
2703 drw 04
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1-4
2703 tbl 09
Symbol
I
CC
Parameter
Dynamic Operating
Current
Standby Supply
Current
Test Conditions
Max.
1360
Unit
mA
f = f
MAX
;
CS
= V
IL
V
CC
= Max.; Output Open
CS
≥
V
IH,
V
CC
= Max.
Outputs Open, f = f
MAX
I
SB
480
mA
I
SB1
Full Standby
Supply Current
CS
≥
V
CC
– 0.2V; f = 0
V
IN
> V
CC
– 0.2V or < 0.2V
120
mA
2703 tbl
2703 tbl 07
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%, T
A
= 0
°
C to +70
°
C)
Symbol
Parameter
|I
LI
|
Input Leakage
(Address and Control)
|I
LI
|
Input Leakage (Data)
|I
LO
|
Output Leakage
V
OL
Output LOW
V
OH
Output HIGH
Test Conditions
Min.
—
Max.
80
Unit
μ
A
V
CC
= Max.; V
IN
= GND to V
CC
V
CC
= Max.; V
IN
= GND to V
CC
V
CC
= Max.;
CS
= V
IH
, V
OUT
= GND to V
CC
V
CC
= Min., I
OL
= 8mA
V
CC
= Min., I
OH
= –4mA
—
—
—
2.4
10
10
0.4
—
μ
A
μ
A
V
V
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