參數(shù)資料
型號: IC43R16160-7TG
英文描述: 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
中文描述: 4米× 16位× 4個銀行(256兆)DDR SDRAM內(nèi)存
文件頁數(shù): 20/56頁
文件大?。?/td> 1271K
代理商: IC43R16160-7TG
Data Mask Function
The DDR SDRAM has a Data Mask function that is used in conjunction with the Write cycle, but not the
Read cycle. When the Data Mask is activated (DM high) during a Write operation, the Write is blocked (Mask
to Data Latency = 0).
When issued, the Data Mask must be referenced to both the rising and falling edges of Data Strobe.
Data Mask Timing
Burst Interruption
Read Interrupted by a Read
A Burst Read can be interrupted before completion of the burst by issuing a new Read command to any
bank. When the previous burst is interrupted, the remaining addresses are overridden with a full burst length
starting with the new address. The data from the first Read command continues to appear on the outputs until
the CAS latency from the interrupting Read command is satisfied. At this point, the data from the interrupting
Read command appears on the bus. Read commands can be issued on each rising edge of the system clock.
It is illegal to interrupt a Read with autoprecharge command with a Read command.
Read Interrupted by a Read Command Timing
(CAS Latency = Any; Burst Length = 8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Write
CK, CK
Command
DQS
DQ
DM
T9
t
DMDQSS
t
DMDQSS
t
DMDQSH
t
DMDQSH
(CAS Latency = 2; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read
B
NOP
NOP
NOP
NOP
NOP
NOP
DA0 DA1 DB0 DB1
Read
A
DB2 DB3
CK, CK
Command
DQS
DQ
T9
IC4
3R16160
20
Integrated Circuit Solution Inc.
DDR001
-
0B
1
1
/
10
/
2004
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