參數(shù)資料
型號(hào): IC43R16160-7T
英文描述: 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
中文描述: 4米× 16位× 4個(gè)銀行(256兆)DDR SDRAM內(nèi)存
文件頁數(shù): 4/56頁
文件大?。?/td> 1271K
代理商: IC43R16160-7T
Block Diagram
Row decoder
Memory array
Bank 0
8192 x 256
x32 bit
C
S
Row decoder
Memory array
Bank 1
C
S
Row decoder
Memory array
Bank 2
C
S
Row decoder
Memory array
Bank 3
C
S
Input buffer
Output buffer
DQ
0
-DQ
15
Column address
counter
Column address
buffer
Row address
buffer
Refresh Counter
A0 - A12, BA0, BA1
A0 - A8, AP, BA0, BA1
Control logic & timing generator
C
C
C
R
C
W
D
Row Addresses
Column Addresses
DLL
Strobe
Gen.
Data Strobe
CK, CK
C
DQS
8192 x 256
x 32 bit
8192 x 256
x 32 bit
8192 x 256
x 32 bit
16M x 16
Capacitance*
T
A
= 0 to 70
°
C, V
CC
= 2.5V
±
0.2V, V
CC
= 2.6V
±
0.1V
for DDR400, f = 1 Mhz
*
Note:
Capacitance is sampled and not 100% tested.
Absolute Maximum Ratings*
Operating temperature range..................0 to 70 °C
Storage temperature range ................-55 to 150 °C
V
DD
Supply Voltage Relative to V
SS
.....-1V to +3.6V
V
DDQ
Supply Voltage Relative to V
SS
......................................................-1V to +3.6V
VREF and Inputs Voltage Relative to V
SS
......................................................-1V to +3.6V
I/O Pins Voltage Relative to V
SS
..........................................-0.5V to V
DDQ
+0.5V
Power dissipation .......................................... 1.6 W
Data out current (short circuit)...................... 50 mA
*Note:
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage of the device.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Input Capacitance
Symbol
Min Max Unit
BA0, BA1, CKE, CS, RAS, (CAS,
A0-A11, WE)
C
INI
2
3.0
pF
Input Capacitance (CK, CK)
C
IN2
2
3.0
pF
Data & DQS I/O Capacitance
C
OUT
4
5
pF
Input Capacitance (DM)
C
IN3
4
5.0
pF
IC4
3R16160
4
Integrated Circuit Solution Inc.
DDR001
-
0B
1
1
/
10
/
2004
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