參數(shù)資料
型號(hào): IC43R16160-6TG
英文描述: 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
中文描述: 4米× 16位× 4個(gè)銀行(256兆)DDR SDRAM內(nèi)存
文件頁(yè)數(shù): 51/56頁(yè)
文件大?。?/td> 1271K
代理商: IC43R16160-6TG
Figure 44 - BANK READ ACCESS
CK
/CK
COMMAND
NOP
NOP
NOP
NOP
READ
ACT
CKE
RA
RA
RA
RA
RA
A10
BA0, BA1
Bank
x
Bank
x
NOP
NOP
NOP
PRE
DIS AP
ONE BANK
ALL BANKS
tCK
tCH
tCL
tIS
tIS
tIH
tIS
tIS
tIH
tIH
tIH
tIS
tIH
RA
DO
n
= Data Out from column
n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO
n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
Note that tRCD > tRCD MIN so that the same timing applies if Autoprecharge is enabled (in which case tRAS would be limiting)
tRCD
tRAS
tRC
*Bank
x
Bank
x
tRP
CL = 2
Col
n
ACT
xx4:A0-A9
x16:x8:x4:A11
DON'T CARE
DQ
DM
DQS
Case 1:
tAC/tDQSCK = min
DQ
DQS
tRPRE
tRPRE
t
t
t
min
HZ
t
HZ
t
min
LZ
t
LZ
t
LZ
t
min
LZ
t
min
AC
t
DQSCK
t
min
t
AC
DO
n
DO
n
DQSCK
RPST
RPST
IC4
3R16160
Case 2:
tAC/tDQSCK = max
Integrated Circuit Solution Inc.
DDR001-0B
1
1
/
10
/
2004
51
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