參數(shù)資料
型號： IC42S16160-7TIG
英文描述： 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
中文描述： 4米× 16 × 4銀行（256兆）內(nèi)存
文件頁數(shù)： 24/69頁
文件大?。?/td> 1219K
代理商： IC42S16160-7TIG
IC42S16160
24
Integrated Circuit Solution Inc.
DR037-0A 9/05/2003
Write to Read Command Interval
The write command to read command interval is also a minimum of 1 cycle. Only the write data before the read command
will be written. The data bus must be Hi-Z at least one cycle prior to the first D
OUT
.
WRITE to READ Command Interval
Burst lengh=4
CLK
Command
CAS latency=2
DQ
Command
CAS latency=3
DQ
QB0
QB3
QB2
QB1
WRITE A
Write A
T0
T1
T2
T3
T4
T5
T6
T7
T8
QB0
QB3
QB2
QB1
1 cycle
Read B
DA0
Read B
DA0
Hi-Z
Hi-Z
Read to Write Command Interval
During a read cycle, READ can be interrupted by WRITE.
DQM must be in High at least 3 clocks prior to the write command. There is a restriction to avoid a data conflict. The data
bus must be Hi-Z using DQM before Write.
相關(guān)PDF資料
PDF描述
IC43R16160 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
IC43R16160-5T 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
IC43R16160-5TG 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
IC43R16160-6T 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
IC43R16160-6TG 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC42S16160B-7TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256-MBIT SYNCHRONOUS DRAM
IC42S16400 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400-6BG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400-6BIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400-6T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM
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