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| 型號(hào)： | IC42S16101-5TIG |
| 英文描述： | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| 中文描述： | 為512k × 16位× 2銀行（16兆）內(nèi)存 |
| 文件頁(yè)數(shù)： | 6/78頁(yè) |
| 文件大?。?/td> | 786K |
| 代理商： | IC42S16101-5TIG |
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IC42S16101
6
Integrated Circuit Solution Inc.
DR025-0F 01/17/2005
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
0V
≤
V
IN
≤
V
CC
, with pins other than
the tested pin at 0V
Output is disabled
0V
≤
V
OUT
≤
V
CC
I
OUT
= –2 mA
I
OUT
= +2 mA
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
–5
5
μA
I
OL
Output Leakage Current
–10
10
μA
V
OH
V
OL
Output High Voltage Level
Output Low Voltage Level
2.4
—
—
0.4
V
V
I
CC
1
Operating Current
(1,2)
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
CAS
latency = 3
-5
-6
-7
—
—
—
150
145
140
mA
mA
mA
I
CC
2
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
t
CK
= t
CK
(
MIN
)
—
—
2
mA
I
CC
3
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
—
—
—
-5
-6
-7
-5
-6
-7
—
—5
—6
—7
—
—
—
—
—
—
—
50
45
40
150
140
130
100
90
80
1
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
CC
4
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
I
CC
5
Auto-Refresh Current
t
RC
= t
RC
(
MIN
)
I
CC
6
Self-Refresh Current
CKE
≤
0.2V
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between Vcc and GND for each
memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load.
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PDF描述 |
|---|---|
| IC42S16101-6BG | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16101-6BIG | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16101-6T | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16101-6TG | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16101-6TI | 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC42S16101-6BG | 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16101-6BIG | 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16101-6T | 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16101-6TG | 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
| IC42S16101-6TI | 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
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