參數(shù)資料
型號: K4B1G0446C-CF8
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb C-die DDR3 SDRAM Specification
中文描述: 1Gb的?芯片的DDR3 SDRAM規(guī)范
文件頁數(shù): 55/63頁
文件大小: 1255K
代理商: K4B1G0446C-CF8
Page 55 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
V
SS
CK
CK
tDS
tDH
Setup Slew Rate
Rising Signal
Setup Slew Rate
Falling Signal
Delta TF
Delta TR
V
REF(dc)
- Vil(ac)max
Delta TF
=
Vih(ac)min - V
REF(dc)
Delta TR
=
V
DDQ
V
IH(ac)
min
V
IH(dc)
min
V
REF(dc)
V
IL(dc)
max
V
IL(ac)
max
nominal slew
rate
nominal
slew rate
VREF to ac
region
VREF to ac
region
Figure 21 - Illustration of nominal slew rate and tVAC for setup time tDS (for DQ with respect to strobe) and tIS
(for ADD/CMD with respect to clock).
tIS
tIH
tDS
tDH
tIS
tIH
tVAC
tVAC
Note :Clock and Strobe are drawn on a different time scale.
DQS
DQS
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