參數(shù)資料
型號(hào): HY62UT08081E-DGC
廠商: Hynix Semiconductor Inc.
英文描述: 32Kx8bit CMOS SRAM
中文描述: 32Kx8bit CMOS SRAM的
文件頁數(shù): 5/12頁
文件大小: 192K
代理商: HY62UT08081E-DGC
HY62K(U,V)T08081E Series
AC CHARACTERISTICS
Vcc = 2.7~3.6V , T
A
= 0
°
C
to 70
°
C
(Normal)/-25
°
C to 85
°
C (Extended) /-40
°
C to 85
°
C (Industrial),
unless otherwise specified.
Symbol
Parameter
#
Rev 02 / Apr. 2001
4
-70
-85
-10
Min.
Max.
Min.
Max.
Min
Max.
1
2
3
4
5
6
7
8
9
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
WRITE CYCLE
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
70
-
-
-
10
5
0
0
10
-
85
-
-
-
10
5
0
0
10
-
100
-
-
-
10
5
0
0
15
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
70
70
35
-
-
30
30
-
85
85
40
-
-
30
30
-
100
100
50
-
-
30
30
-
10
11
12
13
14
15
16
17
18
19
tWC
tCW
tAW
tAS
tWP
tWR
tWHZ
tDW
tDH
tOW
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
70
60
60
0
50
0
0
30
0
5
-
-
-
-
-
-
85
70
70
0
60
0
0
40
0
5
-
-
-
-
-
-
100
80
80
0
70
0
0
40
0
10
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
25
-
-
-
30
-
-
-
35
-
-
-
READ CYCLE
Unit
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