參數(shù)資料
型號(hào)： HY5PS1G431CLFP-C4
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 1Gb DDR2 SDRAM
中文描述： 256M X 4 DDR DRAM, 0.5 ns, PBGA60
封裝： ROHS COMPLIANT, FBGA-60
文件頁(yè)數(shù)： 10/37頁(yè)
文件大小： 539K
代理商： HY5PS1G431CLFP-C4
Rev. 0.2 / Dec 2006
10
HY5PS1G431C(L)FP
HY5PS1G831C(L)FP
HY5PS1G1631C(L)FP
2. Maximum DC Ratings
2.1 Absolute Maximum DC Ratings
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the
χεντερ
/top side of the DRAM. For the measurement
conditions. please refer to JESD51-2 standard.
2.2 Operating Temperature Condition
Note:
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measure-
ment conditions, please refer to JESD51-2 standard.
2. At 85~95° T
OPER
, Double refresh rate(tREFI: 3.9us) is required, and to enter the self refresh mode at this tem-
perature range, an EMRS command is required to change
ι
nternal refresh rate.
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
V
IN,
V
OUT
Voltage on any pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
T
STG
Storage Temperature
-55 to +100
°
C
1, 2
I
I
Input leakage current; any input 0V VIN VDD;
all other balls not under test = 0V)
-2 uA ~ 2 uA
uA
I
OZ
Output leakage current; 0V VOUT VDDQ; DQ
and ODT disabled
-5 uA ~ 5 uA
uA
Symbol
Parameter
Rating
Units
°
C
Notes
T
OPER
Operating Temperature
0 to 95
1,2
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