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參數(shù)資料
| 型號： | HY5PS1G1631CLFP |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1Gb DDR2 SDRAM |
| 中文描述： | 1G DDR2內(nèi)存 |
| 文件頁數(shù)： | 34/37頁 |
| 文件大?。?/td> | 539K |
| 代理商： | HY5PS1G1631CLFP |
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Rev. 0.2 / Dec 2006
34
HY5PS1G431C(L)FP
HY5PS1G831C(L)FP
HY5PS1G1631C(L)FP
19. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the
device output is no longer driving (tRPST), or begins driving (tRPRE). Below figure shows a method to calcu-
late these points when the device is no longer driving (tRPST), or begins driving (tRPRE). Below Figure shows
a method to calculate these points when the device is no longer driving (tRPST), or begins driving (tRPRE) by
measuring the signal at two different voltages. The actual voltage measurement points are not critical as long
as the calculation is consistent.
20. Input waveform timing with differential data strobe enabled MR[bit10] =0, is referenced from the input
signal crossing at the V
IH
(ac) level to the differential data strobe crosspoint for a rising signal, and from the
input signal crossing at the V
IL
(ac) level to the differential data strobe crosspoint for a falling signal applied to
the device under test.
21. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input
signal crossing at the V
IH
(dc) level to the differential data strobe crosspoint for a rising signal and V
IL
(dc) to
the differential data strobe crosspoint for a falling signal applied to the device under test.
22. Input waveform timing is referenced from the input signal crossing at the V
IH
(ac) level for a rising signal
and V
IL
(ac) for a falling signal applied to the device under test.
23. Input waveform timing is referenced from the input signal crossing at the V
IL
(dc) level for a rising signal
and V
IH
(dc) for a falling signal applied to the device under test.
DQS
V
DDQ
V
IH(ac)
min
V
IH(dc)
min
tDH
tDS
DQS
V
REF
(dc)
V
IL(dc)
max
V
SS
V
IL(ac)
max
tDH
tDS
Differential Input waveform timing
tHZ , tRPST end point = 2*T1-T2
tLZ , tRPRE begin point = 2*T1-T2
VOH + xmV
VOH + 2xmV
VOL + 1xmV
VOL + 2xmV
tHZ
tRPST end point
VTT + 2xmV
VTT + xmV
VTT -xmV
VTT - 2xmV
tHZ
tRPRE begin point
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5PS1G1631CLFP-C4 | 1Gb DDR2 SDRAM |
| HY5PS1G1631CLFP-E3 | 1Gb DDR2 SDRAM |
| HY5PS1G1631CLFP-S5 | 1Gb DDR2 SDRAM |
| HY5PS1G1631CLFP-Y5 | 1Gb DDR2 SDRAM |
| HY5PS1G431CFP | 1Gb DDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5PS1G1631CLFP-C4 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631CLFP-E3 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631CLFP-S5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631CLFP-Y5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G421LM | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP) |
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