- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384467 > HY5DU56822DLT (Hynix Semiconductor Inc.) 256Mb DDR SDRAM PDF資料下載
參數(shù)資料
| 型號： | HY5DU56822DLT |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256Mb DDR SDRAM |
| 中文描述： | 256Mb的DDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 18/29頁 |
| 文件大?。?/td> | 236K |
| 代理商： | HY5DU56822DLT |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當(dāng)前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
Rev. 1.0 /Oct. 2004
18
HY5DU56422D(L)T
HY5DU56822D(L)T
HY5DU561622D(L)T
ABSOLUTE MAXIMUM RATINGS
Note:
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note:
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on VREF may not exceed +/- 2% of the DC value.
4. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temper-
ature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum
difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to mini-
mum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
6. VIN=0 to VDD, All other pins are not tested under VIN =0V.
7. DQs are disabled, VOUT=0 to VDDQ
Parameter
Symbol
Rating
Unit
Operating Temperature (Ambient)
T
A
0 ~ 70
o
C
o
C
V
V
V
V
mA
Storage Temperature
Voltage on V
DD
relative to V
SS
Voltage on V
DDQ
relative to V
SS
Voltage on inputs relative to V
SS
Voltage on I/O pins relative to V
SS
Output Short Circuit Current
Soldering Temperature
Time
T
STG
V
DD
V
DDQ
V
INPUT
V
IO
IOS
T
SOLDER
-55 ~ 150
-1.0 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-0.5 ~3.6
50
260
10
o
C
Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Power Supply Voltage (DDR200, 266, 333)
Power Supply Voltage (DDR200, 266, 333)
1
Power Supply Voltage (DDR400)
Power Supply Voltage (DDR400)
1
Input High Voltage
Input Low Voltage
2
Termination Voltage
Reference Voltage
3
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
4
V-I Matching: Pullup to Pulldown Current Ratio
5
Input Leakage Current
6
Output Leakage Current
7
Output High Current
(min VDDQ, min VREF, min VTT)
Output Low Current
(min VDDQ, max VREF, max VTT)
Output High Current
(min VDDQ, min VREF, min VTT)
Output Low Current
(min VDDQ, max VREF, max VTT)
V
DD
V
DDQ
2.3
2.3
2.5
2.5
2.7
2.7
V
V
V
DD
V
DDQ
2.5
2.5
2.6
2.6
2.7
2.7
V
V
V
IH
V
IL
V
REF
+ 0.15
-0.3
-
-
V
DDQ
+ 0.3
V
REF
- 0.15
V
V
V
TT
V
REF
V
REF
- 0.04
0.49*VDDQ
V
REF
V
REF
+ 0.04
0.51*VDDQ
V
V
0.5*VDDQ
VIN(DC)
VID(DC)
-0.3
0.36
-
-
VDDQ+0.3
VDDQ+0.6
V
V
VI(RATIO)
0.71
-
1.4
-
I
LI
-2
-
2
uA
I
LO
-5
-
5
uA
Normal Strength
Output Driver
(V
OUT
=VTT
±
0.84
)
IOH
-16.8
-
-
mA
IOL
16.8
-
-
mA
Half Strength
Output Driver
(V
OUT
=VTT
±
0.68
)
IOH
-13.6
-
-
mA
IOL
13.6
-
-
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5DU56822DT | 256Mb DDR SDRAM |
| HY5DU56422BT-D4 | 256M-P DDR SDRAM |
| HY5DU56822BT-D | 256M-P DDR SDRAM |
| HY5DU56422CT-D | 256M-P DDR SDRAM |
| HY5DU561622CT-D4 | 256M-P DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DU56822DLTP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) |
| HY5DU56822DLTP-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) |
| HY5DU56822DLTP-J | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) |
| HY5DU56822DLTP-K | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) |
| HY5DU56822DLTP-L | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。